AP05N50EI-HF advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 500v fast switching characteristic r ds(on) 1.6 simple drive requirement i d 5a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w p d @t a =25 total power dissipation w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 4 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change without notice 5 20 31.3 5 12.5 -55 to 150 1.92 + 30 rating 500 halogen-free product parameter 201011301 storage temperature range -55 to 150 1 parameter the ap05n50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. the to-220cfm isolation package is widely preferred for commercial-industrial through hole applications. g d s g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 500 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =2a - - 1.6 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2a - 3.5 - s i dss drain-source leakage current v ds =400v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 25v, v ds =0v - - + 10 ua q g total gate charge 3 i d =1a - 20 32 nc q gs gate-source charge v ds =400v - 4 - nc q gd gate-drain ("miller") charge v gs =10v - 8 - nc t d(on) turn-on delay time 3 v dd =250v - 10 - ns t r rise time i d =1a - 4 - ns t d(off) turn-off delay time r g =3.3 -27- ns t f fall time v gs =10v - 18 - ns c iss input capacitance v gs =0v - 775 1240 pf c oss output capacitance v ds =25v - 75 - pf c rss reverse transfer capacitance f=1.0mhz - 10 - pf r g gate resistance f=1.0mhz - 3.5 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =2a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =2a, v gs =0 v , - 250 - ns q rr reverse recovery charge di/dt=100a/s - 1.75 - uc notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=1mh , r g =25 , i as =5a. 3.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP05N50EI-HF
a p05n50ei-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.8 0.9 1 1.1 1.2 -40 0 40 80 120 t j , junction temperature ( o c) normalized bv dss (v) 0 2 4 6 8 0 4 8 12162024 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =2a v g =10v 0 1 2 3 4 5 0 5 10 15 20 25 30 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j = 150 o ct j = 25 o c 0 0.5 1 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) i d =250ua i d =1ma
AP05N50EI-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 10 12 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =1a v ds =400v 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge operation in this area limited by r ds(on)
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